AP30H06DF datasheet(1/7 Pages) APME

Part #	AP30H06DF

Description	60V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP30H06DF

60V N-Channel Enhancement Mode MOSFET

AP30H06DF REV1.0

永源微電子科技有限公司

Description

The AP30H06DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =30A

RDS(ON) <36mΩ @ VGS=10V（Type：28mΩ）

Application

LED lamp

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30H06DF

PDFN3*3-8L

AP30H06DF XXX YYYY

5000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

30

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

17

A

IDM

Pulsed Drain Current

74

A

IAS

Avalanche Current

13

A

EAS

Single Pulsed Avalanche Energy

22

mJ

PD@TC=25

℃

Power Dissipation

31.3

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

4

℃/W

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