AP40N04D

40V N-Channel Enhancement Mode MOSFET

AP40N40D REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

44

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.032

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=7A

---

17

25

mΩ

VGS=4.5V , ID=6A

---

19

28

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.4

2.5

V

IDSS

Drain-Source Leakage Current

VDS=40V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=40V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Rg

Gate Resistance

VDS=0V, VGS=0V , f=1MHz

---

2.1

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=20V, VGS=4.5V , ID=10A

---

16

---

nC

Qgs

Gate-Source Charge

---

4

---

Qgd

Gate-Drain Charge

---

3

---

Td(on)

Turn-On Delay Time

VDD=20V , VGS=10V ,

RG=3.3Ω

ID=10A

---

5

---

ns

Tr

Rise Time

---

6

---

Td(off)

Turn-Off Delay Time

---

19

---

Tf

Fall Time

---

3

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

815

---

pF

Coss

Output Capacitance

---

59

---

Crss

Reverse Transfer Capacitance

---

47

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

8.4

A

ISM

Pulsed Source Current2,5

VGS=0V , IS=12A , TJ=25

℃

---

---

48

A

VSD

Diode Forward Voltage2

---

---

1.2

V

trr

Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25

℃

---

8

---

nS

Qrr

Reverse Recovery Charge

---

4

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS =10V,L=0.1mH,IAS =10A

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.