TSH120ICT datasheet(3/13 Pages) STMICROELECTRONICS

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TSH120

Electrical characteristics

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Electrical characteristics

Table 3.

Electrical characteristics for VCC = +2.5V and +3.3V, Tamb = 25°C (unless otherwise

specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

DC performance

Vdc

Output DC level shift

RL = 150Ω

129

158

Tmin ≤ Tamb ≤ Tmax

403

μV/°C

Iib

Input bias current

VCC= +3.3V

Tmin ≤ Tamb ≤ Tmax

-880

-550

-650

VCC= +2.5V

Tmin ≤ Tamb ≤ Tmax

-840

-550

-620

Internal voltage gain

Vin=1V

Tmin ≤ Tamb ≤ Tmax

5.95

6.1

6.05

6.2

PSRR

Power supply rejection ratio

20 log (

ΔVCC/ΔVout)

ΔVCC=±100mV at 1MHz

ICC

Current consumption

No load, Vin=+0.5V

VCC=+3.3V

Tmin ≤ Tamb ≤ Tmax

5.8

6.7

6.6

No load, Vin=+0.5V

VCC=+2.5V

Tmin ≤ Tamb ≤ Tmax

5.8

6.7

6.3

Enable/standby (EN pin)

ISTBY

Consumption in standby mode

VCC=+3.3V

μA

VCC=+2.5V

VSTBY-low

Standby low level

Standby mode

+0.3

VSTBY-high Standby high level

Enable mode

+0.8

Ton

Time from standby to enable

μs

Toff

Time from enable to standby

μs

Dynamic performance and output characteristics

Frequency response

Vout=2Vpp, RL = 150Ω

VCC=+3.3V, F=4.5MHz

Tmin ≤ Tamb ≤ Tmax

-0.4

-0.1

-0.48

0.4

Vout=2Vpp, RL = 150Ω

VCC=+2.5V, F=4.5MHz

VCC=+3.3V, F=27MHz

Tmin ≤ Tamb ≤ Tmax

-20

-25

-23

VOH

High level output voltage

VCC=+3.3V, RL=150Ω

VCC=+2.5V, RL=150Ω

3.13

2.36

3.21

2.42

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