AP68N03DF datasheet(1/7 Pages) APME

Part #	AP68N03DF

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP68N03DF

30V N-Channel Enhancement Mode MOSFET

AP68N03DF RVE1.0

永源微電子科技有限公司

Description

The AP68N03DF uses advanced APM-SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection or

in other Switching application.

General Features

VDS = 30V ID =68A

RDS(ON) <6.0mΩ @ VGS=10V (Type：4.8mΩ)

CISS≈814PF

Application

Buck And Boost

Wireless impact

Car charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP68N03DF

PDFN3*3-8L

AP68N03DF XXX YYYY

5000

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

68

A

ID@TC=75℃

Continuous Drain Current, VGS @ 10V1

35

A

IDM

Pulsed Drain Current2

150

A

EAS

Single Pulse Avalanche Energy3

28.8

mJ

IAS

Avalanche Current

24

A

PD@TA=25℃

Total Power Dissipation4

24

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

5.2

℃

/W

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AP68N03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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