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AP68N04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP68N04DF
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP68N04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP68N04DF
40V N-Channel Enhancement Mode MOSFET
AP68N04DF RVE1.0
永源微電子科技有限公司
Description
The AP68N04DF uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =68A
RDS(ON) < 8.5mΩ @ VGS=10V （Type：6.9mΩ）
Ciss≈690 PF
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP68N04DF
PDFN3*3-8L
AP68N04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
68
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
33
A
IDM
Pulsed Drain Current2
125
A
EAS
Single Pulse Avalanche Energy3
31
mJ
IAS
Avalanche Current
31
A
PD@TA=25℃
Total Power Dissipation4
1.67
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
30
℃
/W


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