AP70N10FIPIT

100V N-Channel Enhancement Mode MOSFET

AP70N10F/P/T RVE1.1

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

110

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=30A

---

18

25

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2.0

3.0

4.0

V

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=30A

---

31

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.9

3.8

Ω

Qg

Total Gate Charge (10V)

VDS=80V , VGS=10V , ID=30A

---

27.6

---

nC

Qgs

Gate-Source Charge

---

11.4

---

Qgd

Gate-Drain Charge

---

7.9

---

Td(on)

Turn-On Delay Time

VDD=50V , VGS=10V

, RG=3.3Ω,

ID=30A

---

16.5

---

ns

Tr

Rise Time

---

35

---

Td(off)

Turn-Off Delay Time

---

17.5

---

Tf

Fall Time

---

12

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1890

---

pF

Coss

Output Capacitance

---

268

---

Crss

Reverse Transfer Capacitance

---

67

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

58

A

ISM

Pulsed Source Current2,5

---

---

130

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=30A , dI/dt=100A/µs ,

TJ=25

℃

---

22

---

nS

Qrr

Reverse Recovery Charge

---

20

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.