P2003BDG datasheet(2/5 Pages) NIKOSEM

2 / 5 page

REV 1.0

Sep-09-2009

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

P2003BDG

TO-252 (DPAK)

Halogen-Free & Lead-Free

VGS = 4.5V, ID = 10A

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 15A

mΩ

Forward Transconductance

gfs

VDS = 5V, ID = 15A

DYNAMIC

Input Capacitance

Ciss

492

Output Capacitance

Coss

221

Reverse Transfer Capacitance

Crss

VGS = 0V, VDS = 15V, f = 1MHz

187

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

1.5

Qg (VGS=10V)

14.7

Total Gate Charge

Qg(VGS=4.5V)

7.7

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS = 15V, ID = 15A

5.6

Turn-On Delay Time

td(on)

Rise Time

VDD = 15V

Turn-Off Delay Time

td(off)

ID  15A, VGS = 10V, RGS = 6Ω

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 15A, VGS = 0V

1.4

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

IF = 15A, dlF/dt = 100A / S

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT #

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