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AP75N10NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP75N10NF
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP75N10NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP75N10NF
100V N-Channel Enhancement Mode MOSFET
AP75N10NF REV1.0
永源微電子科技有限公司
Description
The AP75N10NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =75A
RDS(ON) < 15mΩ@ VGS=10V （Type：11mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP75N10NF
PDFN5X6-8L
AP75N10NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
75
A
ID@TC=100
℃
Drain Current, VGS @ 10V
38
A
IDM
Pulsed Drain Current1
236
A
EAS
Single Pulse Avalanche Energy
108
mJ
IAS
Avalanche Current
40
A
PD@TC=25
℃
Total Power Dissipation
146
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
62.5
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
1.4
℃/W


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