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AP100N04D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N04D
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N04D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N04D
40V N-Channel Enhancement Mode MOSFET
AP100N04D REV1.1
永源微電子科技有限公司
Description
The AP100N04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=40V ID=100A
RDS(ON) < 5.5mΩ @ VGS=10V (Type：4.2mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N04D
TO-252-3L
AP100N04D XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
58
A
IDM
Pulsed Drain Current2
150
A
EAS
Single Pulse Avalanche Energy3
110.5
mJ
IAS
Avalanche Current
47
A
PD@TC=25℃
Total Power Dissipation4
52.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.4
℃
/W


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