AP90N12NF datasheet(1/7 Pages) APME

Part #	AP90N12NF

Description	120V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP90N12NF

120V N-Channel Enhancement Mode MOSFET

AP90N12NF REV1.0

永源微電子科技有限公司

Description

The AP90N12NF uses advanced SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 7.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 120V ID =90A

RDS(ON) < 9mΩ @ VGS=10V （Type：7.5mΩ）

Application

Mobile phone fast charging

Brushless motor

Home appliance control board

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N12NF

PDFN5*6-8L

AP90N12NF XXXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

120

V

VGS

Gate source voltage

±20

V

ID@TA=25℃

Continuous drain current1), TC=25 ℃

90

A

ID@TA=70℃

Continuous drain current1), TC=75 ℃

35

A

IDM

Pulsed drain current2), TC=25 ℃

270

A

PD

Power dissipation3), TC=25 ℃

160

W

EAS

Single pulsed avalanche energy4)

125

mJ

Tstg，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

0.89

℃

/W

RθJA

Thermal resistance, junction-ambient5)

25

℃

/W

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AP90N12NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP90N12NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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