P0803BD datasheet(2/5 Pages) UNIKC

2 / 5 page

P0803BDG

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.8

±250

8.8

9.2

19.4

120

910

300

155

4.3

102

1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

IF = IS, dlF/dt = 100A /mS

UNITS

Qrr

VDS = 15V ,RL=0.75Ω

ID≌20A, VGS = 10V, RGEN =2.5Ω

TEST CONDITIONS

VDS = VGS, ID = 250mA

On-State Drain Current

VGS = 10V

mΩ

VGS = 0V, ID = 250mA

IF =IS, VGS = 0V

DYNAMIC

VDS =20V, VGS = 0V

VSD

VGS = 0V, VDS = 15V, f = 1MHz

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

VGS(th)

VDS =15V,

ID = 25A

Qgs

Qgd

td(on)

ID(ON)

SYMBOL

V(BR)DSS

td(off)

VDS = 10V, VGS = 10V

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate Threshold Voltage

Drain-Source Breakdown Voltage

PARAMETER

Forward Transconductance

Drain-Source On-State

Resistance

VGS =5V, ID =16A

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

VGS = 4.5V

Input Capacitance

VDS =15V, ID =30A

Crss

VDS =20V, VGS = 0V, TJ = 125°C

VGS =10V, ID =25A

VDS = 0V, VGS = ±20V

LIMITS

STATIC

Reverse Recovery Charge

Turn-Off Delay Time

Rise Time

Gate Resistance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Gate-Drain Charge

Gate-Source Charge

Reverse Recovery Time

IGSS

IDSS

RDS(ON)

gfs

Ciss

Coss

Forward Voltage

Continuous Current

Fall Time

trr

REV 1.0

2014/5/6

P0803BD Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

P0803BD Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Html Pages

1 2 3 4 5

Datasheet Download

Link URL