STM32F101R4U6ATR datasheet(50/87 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F101x4, STM32F101x6

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The test results are given in Table 28. They are based on the EMS levels and classes

defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and pre

qualification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•

Corrupted program counter

•

Unexpected reset

•

Critical Data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second. To complete these trials, ESD stress can be applied directly on the device, over the

range of specification values. When unexpected behavior is detected, the software can be

hardened to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device is monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC61967-2 standard which specifies the test board and the pin loading.

Table 28. EMS characteristics

Symbol

Parameter

Conditions

Level/Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, TA = +25 °C,

fHCLK= 36 MHz

conforms to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS pins

to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C,

fHCLK = 36 MHz

conforms to IEC 61000-4-4

Table 29. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

Unit

8/36 MHz

SEMI

Peak level

VDD = 3.3 V, TA = 25 °C,

compliant with

IEC 61967-2

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1GHz

EMI Level

3.5

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