AP280N10MP

100V N-Channel Enhancement Mode MOSFET

AP280N10MP REV1.1

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

100

107

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS=100V, VGS=0V

-

-

1

μA

IDSS

Zero Gate Voltage Drain Current TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source on-Resistance4

VGS=10V, ID=20A

-

2.0

2.5

mΩ

gfs

Forward Transconductance4

VDS=10V, ID=20A

-

76

-

S

Ciss

Input Capacitance

VDS=50V, VGS=0V, f=1MHz

-

9030

-

pF

Coss

Output Capacitance

-

1505

-

Crss

Reverse Transfer Capacitance

-

40

-

Rg

Gate Resistance

f =1MHz

-

2.3

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 50V,

ID=20A

-

150

-

nC

Qgs

Gate-Source Charge

-

32.5

-

Qgd

Gate-Drain Charge

-

49

-

td(on)

Turn-on Delay Time

VGS =10V, VDD =50V, RG =

3Ω, ID= 20A

-

27

-

ns

tr

Rise Time

-

78.5

-

td(off)

Turn-off Delay Time

-

110

-

tf

Fall Time

-

86

-

trr

Body Diode Reverse Recovery Time

IF = 20A, dI/dt=100A/µs

-

88

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

220

-

nC

VSD

Diode Forward Voltage4

ID = 20A, VGS=0V

-

-

1.2

V

IS

Continuous Source Current TC=25°C

-

-

220

A

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=54A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.