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AP280P04TLT1 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP280P04TLT1
Description  -40V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP280P04TLT1 Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP280P04TLT1
-40V P-Channel Enhancement Mode MOSFET
AP280P04TLT1 REV1.0
永源微電子科技有限公司
Description
The AP280P04TLT1 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -40V ID =-280 A
RDS(ON) < 2.0mΩ @ VGS=-10V (Type：1.6mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP280P04TLT1
TOLLA-8L
AP280P04TLT1 XXX YYYY
2000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
-280
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
-180
A
IDM
Pulsed Drain Current2
-1240
A
EAS
Single Pulse Avalanche Energy3
1820
mJ
IAS
Avalanche Current
-100
A
PD@TC=25℃
Total Power Dissipation4
350
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
40
℃
/W
RθJC
Thermal Resistance Junction-Case1
0.9
℃
/W


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