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AP320N10TLG2 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP320N10TLG2
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP320N10TLG2 Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP320N10TLG2
100V N-Channel Enhancement Mode MOSFET
AP320N10TLG2 REV1.0
永源微電子科技有限公司
Description
The AP320N10TLG2 uses advanced APM-SGTⅠⅠ technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =320A
RDS(ON) <1.6mΩ @ VGS=10V (Type：1.3mΩ)
Application
DC/DC Converter
LED Backlighting
Power Management Switches
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP320N10TLG2
TOLLA-8L
AP320N10TLG2 XXX YYYY
2000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V
320
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V
210
A
IDM
Pulsed Drain Current
1248
A
EAS
Single Pulse Avalanche Energy
2340
mJ
IAS
Avalanche Current
53.4
A
PD@TC=25
℃
Total Power Dissipation4
390.6
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient
40
℃/W
RθJC
Thermal Resistance Junction-Case
0.32
℃/W


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