AP3205P

55V N-Channel Enhancement Mode MOSFET

AP3205P Rve1.0

臺灣永源微電子科技有限公司

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID

=250μA

55

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS =55V, VGS = 0V,

TJ= 25℃

-

-

1.0

μA

VDS =44V, TC = 125℃

-

-

10

IGSS

Gate to Body Leakage Current

VDS =0V,VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250

μA

2.0

-

4.0

V

RDS(on)

Static Drain-Source on-Resistance

note2

VGS =10V, ID =30A

-

7.2

8.0

m

Ω

gFS

Forward Transconductance

VDS =20V, ID =30A

45

-

-

S

Ciss

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

-

3291

-

pF

Coss

Output Capacitance

-

671.5

-

pF

Crss

Reverse Transfer Capacitance

-

112.1

-

pF

Qg

Total Gate Charge

VDD =44V, ID =30A,

VGS = 10V

-

112

-

nC

Qgs

Gate-Source Charge

-

23.2

-

nC

Qgd

Gate-D

rain(“Miller”) Charge

-

34.9

-

nC

td(on)

Turn-on Delay Time

V DD=28V, ID=30V,

RG=5

Ω, VGS =10V,

-

19.5

-

ns

tr

Turn-on Rise Time

-

50.7

-

ns

td(off)

Turn-off Delay Time

-

55

-

ns

tf

Turn-off Fall Time

-

24.6

-

ns

IS

Maximum Continuous Drain to Source Diode Forward

Current

-

-

110

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

390

A

VSD

Drain to Source Diode Forward

Voltage

VGS = 0V, IS=30A

-

-

1.3

V

trr

Reverse Recovery Time

VGS =0V, IF=30A,

di/dt=1

00A/μs

-

62.3

-

ns

Qrr

Reverse Recovery Charge

-

137

-

nC

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. Pulse Test: Pulse W

idth≤300μs, Duty Cycle≤2%