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AP3400CI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP3400CI
Description  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP3400CI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP3400CI
30V N-Channel Enhancement Mode MOSFET
AP3400CI REV1.1
永源微電子科技有限公司
Description
The AP3400CI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =5.2A
RDS(ON) < 42mΩ @ VGS=10V （Type：32mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3400CI
SOT23L
A09T..
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current
5.2
A
ID@TA=70℃
Continuous Drain Current
3.6
A
IDM
Pulsed Drain Current
16
A
PD
Power Dissipation TA = 25
℃
1.1
W
RθJA
Thermal Resistance, Junction to Case
113.6
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃


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