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AP4435A Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP4435A
Description  30V P-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP4435A Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP4435A
30V P-Channel Enhancement Mode MOSFET
AP4435A Rve1.2
永源微電子科技有限公司
Description
The AP4435A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -30V ID =-10.5A
RDS(ON) <16mΩ @ VGS=-10V
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP4435A
AP4435A XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-10.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-8.6
A
IDM
Pulsed Drain Current2
-50
A
EAS
Single Pulse Avalanche Energy3
72.2
mJ
IAS
Avalanche Current
-38
A
PD@TA=25℃
Total Power Dissipation4
3.1
W
PD@TA=70℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
75
℃
/W
RθJA
Thermal Resistance Junction-Ambient 1(t≦ 10s)
40
℃
/W
RθJC
Thermal Resistance Junction-Case1
24
℃
/W
SOP-8


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