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AP4435B Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP4435B
Description  -30V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP4435B Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP4435B
-30V P-Channel Enhancement Mode MOSFET
AP4435B RVE1.0
永源微電子科技有限公司
Description
The AP4435B uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -30V ID =-9.3A
RDS(ON) <20mΩ @ VGS=-10V （Type：16mΩ）
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP4435B
SOP-8L
AP4435B XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-9.3
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-7.0
A
IDM
Pulsed Drain Current2
-50
A
PD@TA=25℃
Total Power Dissipation4
3.1
W
PD@TA=70℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1(t≦ 10s)
33.8
℃
/W
RθJC
Thermal Resistance Junction-Case1
24
℃
/W


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