AP4435C datasheet(1/7 Pages) APME

Part #	AP4435C

Description	-30V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP4435C

-30V P-Channel Enhancement Mode MOSFET

AP4435C REV1.0

永源微電子科技有限公司

Description

The AP4435C uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =12A

RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4435C

SOP-8L

AP4435C XXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-12

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-7.1

A

IDM

Pulsed Drain Current2

-40

A

EAS

Single Pulse Avalanche Energy3

7.8

mJ

PD@TC=25℃

Total Power Dissipation4

1.9

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W

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AP4435C Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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