AP4604A

20V N+P-Channel Enhancement Mode MOSFET

AP4604A REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-20

-22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS =-12V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-0.5

-0.65

-1.0

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS=-4.5V, ID=-10A

-

16

23

mΩ

RDS(on)

Static Drain-Source on-Resistance note2

VGS=-2.5V, ID=-8.0A

20

32

mΩ

Ciss

Input Capacitance

VDS=-6V, VGS=0V

f=1.0MHz

-

1100

-

pF

Coss

Output Capacitance

-

390

-

pF

Crss

Reverse Transfer Capacitance

-

300

-

pF

Qg

Total Gate Charge

VDS=-4V, ID=-4.1A,

VGS = -4.5V

-

11.5

nC

Qgs

Gate-Source Charge

-

1.5

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

3.2

-

nC

td(on)

Turn-on Delay Time

VDD =-4V, ID=-3.3A,

RG=1.0Ω, VGEN=-4.5V,

RL=1.2Ω

-

25

-

ns

tr

Turn-on Rise Time

-

45

-

ns

td(off)

Turn-off Delay Time

-

72

-

ns

tf

Turn-off Fall Time

-

60

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-6.0

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS =-4.1A

-

-

-1.2

V

trr

Reverse Recovery Time

VGS=0V, IS=-4.1A,

di/dt=100A/μs

-

20

-

ns

Qrr

Reverse Recovery Charge

-

9

-

nC

Note :

1、The data tested by surface mo

unted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-16V,VGS=-10V,L=0.1mH,IAS=-21A

4、The power dissipation is limited by 150℃ junction temperature

5 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.