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AP4606A Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP4606A
Description  30V NP-Channel Enhancement Mode MOSFET
PDF  11 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP4606A Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP4606A
30V N+P-Channel Enhancement Mode MOSFET
AP4606A REV1.1
永源微電子科技有限公司
Description
The AP4606A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =8.8A
RDS(ON) < 22mΩ @ VGS=10V （Type：15mΩ）
VDS = -30V ID =-7.8A
RDS(ON) < 45mΩ @ VGS=-10V（Type：35mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP4606A
SOP-8L
AP4606A XXX YYYY
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
8.8
-7.8
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
5.5
-4.8
A
IDM
Pulsed Drain Current2
24
-24
A
EAS
Single Pulse Avalanche Energy3
26.6
37
mJ
IAS
Avalanche Current
12.7
10
A
PD@TA=25℃
Total Power Dissipation4
1.5
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
60
℃
/W


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