AP4606B

30V N+P-Channel Enhancement Mode MOSFET

AP4606B REV1.1

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-30

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

-

-

-1.0

µA

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250µA

-1.0

-1.8

-2.5

V

RDS(ON)

Static Drain-Source ON-Resistance(3)

VGS=-10V, ID=-5A

-

42

50

mΩ

VGS=-4.5V, ID=-3A

-

60

75

mΩ

Ciss

Input Capacitance

VGS=0V, VDS=-15V, f= 1MHz

-

540

-

pF

Coss

Output Capacitance

-

75

-

pF

Crss

Reverse Transfer Capacitance

-

57

-

pF

Qg

Total Gate Charge

VGS=0 to -10V VDS=-15V,

ID=-2A

-

11

-

nC

Qgs

Gate Source Charge

-

2

-

nC

Qgd

Gate Drain("Miller") Charge

-

2

-

nC

td(on)

Turn-On DelayTime

VGS=-10V, VDD=-15V

ID=-2A, RGEN =3Ω

-

3

-

ns

tr

Turn-On Rise Time

-

2

-

ns

td(off)

Turn-Off DelayTime

-

26

-

ns

tf

Turn-Off Fall Time

-

15

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-4.1

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -4.1A

-

-

-1.2

V

trr

Body Diode Reverse Recovery Time

IF = -2A, di/dt = 100A/us

-

9

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

3

-

nC

Note :

1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.