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AP8804DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP8804DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP8804DF 20V N+N-Channel Enhancement Mode MOSFET AP8804DF REV1.0 永源微電子科技有限公司 Description The AP8804DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =40A RDS(ON) < 6mΩ @ VGS=4.5V (Type:4.2mΩ) ESD=2500V HBM Application BMS Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP8804DF QFN3X3-8L AP8804DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 40 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 35 A IDM Pulsed Drain Current2 120 A IAS Avalanche Current 30 A PD@TA=25℃ Total Power Dissipation1 1.56 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 80 ℃ /W |
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