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T8M30T800HC Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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T8M30T800HC Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Thyristors T8M30T800HC www.iscsemi.com 1 APPLICATIONS · Three-Quadrant Triggering · Blocking Voltage To 800V · Low Level Triggering And Holding Characteristics · Passivated Die For Reliability And Uniformity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 17 ℃ /W SYMBOL PARAMETER MIN UNIT VDRM Repetitive Peak Off-state Voltage 700 V VRRM Repetitive Peak Reverse Voltage 800 V IT(AV) On-state Current (180° Conduction Angle) Tc= 75℃ A IT(RMS) On-stage RMS current ( Full cycles sine wave, 60 Hz, TC = 95°C ) 8 A ITSM Peak non-repetitive surge current ( one full cycle 60 HZ, TJ = 25°C) 80 A PGM Peak gate power 5 W I2t Circuit fusing consideration ( t= 8.3ms) 26 A2s TJ Operating Junction Temperature -40 ~+150 ℃ Tstg Storage Temperature -40 ~+150 ℃ Vdis Dielectric strength from terminals to case, AC with t=1 minute, RH<30% 2500 V |
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