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APTC60AM18SCG Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # APTC60AM18SCG
Description  SiC MOSFET Power Module
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

APTC60AM18SCG Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  APTC60AM18SCG Datasheet HTML 1Page - Inchange Semiconductor Company Limited APTC60AM18SCG Datasheet HTML 2Page - Inchange Semiconductor Company Limited APTC60AM18SCG Datasheet HTML 3Page - Inchange Semiconductor Company Limited APTC60AM18SCG Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCFM8116
eq APTC60AM18SCG
SiC MOSFET Power Module
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.15
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= 0.25mA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 600V, VGS= 0V
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V, VDS= 0V
--
--
±
400
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 0.25mA
2.1
--
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V, ID= 71.5A
--
--
18
mΩ
SERIES DIODE RATINGS AND CHARACTERISTICS (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VRRM
Repetitive Peak Reverse Voltage
600
--
--
V
IRRM
Peak Reverse Recovery Current
VR=600V
--
--
150
uA
IF
DC Forward Voltage
TC= 80℃
--
200
--
A
VF
Diode Forward Voltage
IF= 200A, VGE= 0V
--
--
2.0
V
trr
Reverse Recovery Time
IF= 200A, VR= 300V,
dIF/dt= 2800A/us
--
127
--
ns
Rth j-c
Thermal Resistance, Junction to Case for Diode
--
--
0.39
℃
/W



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