General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Symbol

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Conditions

VCBO

VCEO

VEBO

ICBO

IEBO

hFE(2)

VCE(sat)

VBE(sat)

fT

IC = 100μA, IE = 0

IC = 1mA, IB = 0

IE = 100µA, IC = 0

VCB = 200V, IE = 0

VEB = 5V, IC = 0

VCE = 10V, IC = 10mA

IC = 20mA, IB = 2mA

IC = 20mA, IB = 2mA

VCE = 20V, IC = 10mA, f = 30MHz

300

300

5

40

50

0.5

0.5

300

0.5

1.0

Min

Max

V

V

V

µA

V

V

MHz

DC current gain

hFE(1)

VCE = 10V, IC = 1mA

25

hFE(3)

VCE = 10V, IC = 30mA

40

µA

Typ

Rating and Characteristic Curves (MMBTA42-HF)

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

0

10

20

4

12

Collector Current, Ic (mA)

Fig.2 - DC Current Gain

10

1000

100

0.1

1

10

100

8

IB=0.01mA

0.02mA

0.03mA

0.04mA

0.05mA

0.06mA

0.07mA

0.08mA

0.09mA

0.1mA

Ta=25°C

2

10

6

5

15

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C

VCE= 10V

Comchip Technology CO., LTD.

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QW-JTR83