Rating and Characteristic Curves (MMBTA56-HF)

General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Symbol

Unit

Conditions

Min

Max

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

VCEO

VEBO

ICBO

IC = -1mA, IB = 0

IE = -100µA, IC = 0

VCB = -80V, IE = 0

-80

-4

-0.1

V

V

Collector-emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

hFE(1)

VCE(sat)

VBE(sat)

fT

VCE = -1V, IC = -10mA

IC = -100mA, IB = -10mA

VCE = -1V, IC = -100mA, f = 100MHz

100

50

400

-0.25

-1.20

V

V

MHz

DC current gain

VCE = -60V, IB = 0V

-0.1

hFE(2)

VCE = -1V, IC = -100mA

100

ICES

µA

IC = -100mA, IB = -10mA

QW-JTR88

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µA

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

-1

-2

-50

0

-100

IB=-0.05mA

-0.1mA

-0.15mA

-0.2mA

-0.25mA

-0.3mA

-0.35mA

-0.4mA

-0.45mA

-0.5mA

Ta=25°C

Collector Current, Ic (mA)

Fig.3 - Collector-Emitter Saturation Voltage

-0.1

-1

-10

-100

-500

-1

-0.1

-0.01

IC:IB=10:1

Ta=25°C

Ta=-25°C

Ta=100°C

Ta=125°C

Collector Current, Ic (mA)

Fig.2 - DC Current Gain

-0.1

-1

-10

-100

-500

10

100

1000

VCE=-1V

Ta=25°C

Ta=-25°C

Ta=100°C

Ta=125°C

Fig.4 - Base-Emitter Saturation Voltage

Collector Current, IC (mA)

-1

-0.1

-0.1

-1

-10

-100

-500

Ta=25°C

Ta=-25°C

Ta=100°C

Ta=125°C

IC:IB=10:1