General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Symbol

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Conditions

VCBO

VCEO

VEBO

ICBO

IEBO

hFE(2)

VCE(sat)

VBE(sat)

fT

IC = -100μA, IE = 0

IC = -1mA, IB = 0

IE = -100µA, IC = 0

VCB = -200V, IE = 0

VEB = -5V, IC = 0

VCE = -10V, IC = -10mA

IC = -20mA, IB = -2mA

IC = -20mA, IB = -2mA

VCE = -20V, IC = -10mA, f = 30MHz

-300

-300

-5

100

50

-250

-100

200

-0.2

-0.9

Min

Max

V

V

V

nA

V

V

MHz

DC current gain

hFE(1)

VCE = -10V, IC = -1mA

60

hFE(3)

VCE = -10V, IC = -30mA

60

nA

Rating and Characteristic Curves (MMBTA92-HF)

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

IB=-0.01mA

-0.02mA

Ta=25°C

-0.03mA

-0.04mA

-0.05mA

-0.06mA

-0.07mA

-0.08mA

-0.09mA

-0.1mA

0

0

-5

-10

-15

-5

-10

-12

Collector Current, Ic (mA)

Fig.2 - DC Current Gain

10

1000

-100

-0.1

-1

-10

100

VCE=-10V

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C

Comchip Technology CO., LTD.

REV:C

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QW-JTR84