General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

Collector cut-off current

DC current gain

Base-Emitter saturation voltage

Collector-Emitter saturation voltage

Transition frequency

Delay time

Storage time

Rise time

Fall time

Output capacitance

Parameter

IC =10μA, IE=0

IC =1mA, IB=0

IE =10μA, IC=0

VCB=60V, IE=0

VCE=40V, IB=0

VCE=30V, VBE(off)=3V

VCE=1V, IC=100µA

VCE=1V, IC=1mA

IC=10mA, IB=1mA

IC=10mA, IB=1mA

VCE=20V, IC=10mA, f=100MHz

VCC=3V, VBE(off)=0.5V,

IC=10mA, IB1=1mA

VCC=3V, IC=10mA,

IB1=IB2=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

IC=50mA, IB=5mA

IC=50mA, IB=5mA

VCB=5V, IE=0, f=1MHz

Conditions

Symbol

V(BR)CBO*

V(BR)CEO*

V(BR)EBO*

hFE*

VCE(sat)*

VBE(sat)*

ICBO*

ICEO*

ICEX

fT

td

tr

ts

tf

Cob

Min

300

40

60

5

40

70

60

Max

60

50

300

0.25

0.85

225

0.95

500

35

35

75

0.3

4

Unit

V

V

V

nA

nA

nA

V

V

MHZ

nS

nS

nS

nS

V

V

pF

100

*Pulse test: pulse width ≤300µs, duty cycle≤2.0%

Input capacitance

VEB=0.5V, IC=0, f=1MHz

Cib

8

pF

Comchip Technology CO., LTD.

Page 2

QW-JTR25

REV:C