Schottky Barrier Rectifiers

Electrical Characteristics (at TA=25°C unless otherwise noted)

Reverse Voltage: 40 to 100 V

Forward Current: 2.0 A

RoHS Device

SB240-G Thru. SB2100-G

Dimensions in inches and (millimeter)

DO-41

1.0(25.4) Min.

1.0(25.4) Min.

.205(5.2)

.160(4.1)

.107(2.7)

.080(2.0)

.034(0.86)

.028(0.70)

Features

-

.

Low drop down voltage

- Metal-Semiconductor junction with guard ring.

- High surge current capability.

-

.

Silicon epitaxial planar chips

-

.

Lead-free part, meet RoHS requirements

Mechanical data

- Epoxy: UL94-V0 rated flame retardant.

- Case: Molded plastic body DO-41.

- Terminals: Solderable per MIL-STD-750 Method 2026.

- Polarity: Color band denotes cathode end.

- Mounting position: Any.

- For use in low voltage, high efficiency inverters,

free wheeling, and polarity protection applications.

Notes: 1.

.

Measured at 1.0MHz and applied reverse voltage of 4.0 volts

2. Thermal resistance junction to ambient and junction to lead.

Parameter

Symbol

Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C, See Figure 1

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

(JEDEC method) TL=110°C

Maximum f

2.0A

orward voltage at

Maximum DC reverse current

TA=25°C

At rated DC blocking voltage

TA=100°C

Typical junction capacitance (Note 1)

Operating junction temperature range

VRRM

VRMS

VDC

IF(AV)

IFSM

VF

IR

CJ

TJ

-55 to +150

V

V

V

A

A

V

pF

°C/W

mA

Storage temperature range

TSTG

°C

°C

Typical t

(Note 2)

hermal resistance

RθJA

RθJL

40

40

60

60

100

100

28

42

70

2.0

-55 to +150

-55 to +125

5

10

35.0

20.0

0.5

0.50

0.85

0.70

150

50

SB240-G

SB260-G

SB2100-G

250

Comchip Technology CO., LTD.

QW-BB041

Page 1

REV:B

Circuit Diagram