Unit

V

V

nS

Max.

-0.85

225

75

35

35

Min.

-40

Symbol

tS

fT

td

tr

tf

Electrical Characteristics (at TA=25°C unless otherwise noted)

IC = -10mA , IB1 = -1mA

Conditions

VCC = -3V

BE(OFF)

= -0.5V

, V

VCC = -3V, IC = -10mA,

IB1 = IB2 = -1mA

Characteristics

Fall Time

Storage Time

Delay Time

Rise Time

IC = -1mA , IB = 0

V(BR)CEO

Collector-Emitter breakdown voltage

V

nA

-50

V

IC = -10μA, IE = 0

V(BR)CBO

-40

Collector-Base breakdown voltage

IE = -10μA, IC = 0

V(BR)EBO

-5

Emitter-Base breakdown voltage

VCE = -30V V

= -3V

,

BE(off)

ICEX

Collector cut-off current

VCE(sat)1

-0.25

V

IC = -10mA IB = -1mA

,

IC = -10mA IB = -1mA

,

VBE(sat)1

DC current gain

VEB = -5V IC = 0

,

VCE = -1V IC = -0.1mA

,

hFE(1)

-100

60

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

nS

nS

nS

250

MHZ

VEB = -0.5V , IE = 0, f = 1MHz

Base input capacitance

General Purpose Transistor

Emitter cut-off current

nA

IEBO

Page 2

Comchip Technology CO., LTD.

REV:A

QW-JTR28

Company reserves the right to improve product design , functions and reliability without notice.

Typ.

VCE = -1V IC = -1mA

,

hFE(2)

80

VCE = -1V IC = -10mA

,

hFE(3)

100

300

VCE = -1V IC = -50mA

,

hFE(4)

60

VCE = -1V IC = -100mA

,

hFE(5)

30

VCE(sat)2

-0.40

V

IC = -50mA IB = -5mA

,

V

-0.95

IC = -50mA IB = -5mA

,

VBE(sat)2

VCE = -20V, IC = -10mA, f = 100MHz

Transition frequency

pF

4.5

VCB = -5V, IE = 0, f = 1MHz

Cob

Collector output capacitance

Cib

10

Noise figure

NF

4

pF

VCE = -5V , IE = -0.1mA, f = 1kHz

RG = 1kΩ

dB

-0.65