M48T251Y datasheet(10/24 Pages) STMICROELECTRONICS

10 / 24 page

M48T251Y, M48T251V

10/24

Table 4. Memory AC Characteristics, M48T251V

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).

2. These parameters are sampled with a 5 pF load are not 100% tested.

3. tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going low to the earlier of CE or

WE going high.

4. tWR is a function of the latter occurring edge of WE or CE.

5. tDH and tDS are measured from the earlier of CE or WE going high.

Symbol

Parameter(1)

M48T251V–85

Unit

Min

Max

tAVAV

tRC

READ Cycle Time

tAVQV

tACC

Access Time

tELQV

tCO

Chip Enable Low to Output Valid

tGLQV

tOE

Output Enable Low to Output Valid

tELQX

tGLQX

tCOE

Chip Enable or Output Enable Low to Output Transition

tAXQX

tOH

Output Hold from Address Change

tEHQZ

tGHQZ

tOD

(2)

Chip Enable or Output Enable High to Output Hi-Z

tWLQZ

tODW

(2)

Output Hi-Z from WE

tAVAV

tWC

WRITE Cycle Time

tWLWH

tWP1

(3)

WRITE Enable Pulse Width

tELEH

tWP2

Chip Enable Pulse Width

tAVEL

tAVWL

tAW

Address Setup Time

tEHAX

tWR1

(4)

WRITE Recovery Time

tWHAX

tWR2

Address Hold Time from WE

5ns

tWHQX

tOEW

Output Active from WE

5ns

tDVEH

tDVWH

tDS

(5)

Data Setup Time

tWHDX

tDH1

(5)

Data Hold Time from WE

0ns

tEHDX

tDH2

Data Hold Time from CE

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