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DMNH6009SPS-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMNH6009SPS-13
Description  60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6009SPS-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMNH6009SPS
Document number: DS41482 Rev. 3 - 2
2 of 9
www.diodes.com
March 2020
© Diodes Incorporated
DMNH6009SPS
Ordering Information (Note 4)
Part Number
Case
Packaging
DMNH6009SPS-13
PowerDI5060-8/ PowerDI5060-8 (SWP) (Type UX)
2500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-
free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 7) VGS = 10V
TC = +25°C
TC = +100°C
ID
95
67
A
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
IDM
380
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
95
A
Pulsed Source Current (380µs Pulse, Duty Cycle = 1%)
ISM
380
A
Avalanche Current, L = 0.1mH (Note 8)
IAS
56
A
Avalanche Energy, L = 0.1mH (Note 8)
EAS
226
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.6
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
95
°C/W
Total Power Dissipation (Note 6)
PD
3.3
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
46
°C/W
Thermal Resistance, Junction to Case (Note 7)
RθJC
1.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
= Manufacturer
’s Marking
NH6009SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)



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