M48T513Y datasheet(8/23 Pages) STMICROELECTRONICS

8 / 23 page

M48T513Y, M48T513V

8/23

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C)

Note: 1. All voltages referenced to VSS.

2. At 25

°C.

Table 8. Power Down/Up AC Characteristics

(TA = 0 to 70 °C)

Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200ms after VCC pass-

es VPFD (min).

2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

Symbol

Parameter

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage

M48T513Y

4.2

4.35

4.5

M48T513V

2.7

2.9

3.0

VSO

Batter y Back-up Switchover Voltage

M48T513Y

3.0

M48T513V

VPFD –100mV

tDR

(2)

Expected Data Retention Time

YEARS

Symbol

Parameter

Min

Max

Unit

(1)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(2)

VPFD (min) to VSS VCC Fall Time

M48T513Y

µs

M48T513V

150

µs

VPFD (min) to VPFD (max) VCC Rise Time

µs

tRB

VSS to VPFD (min) VCC Rise Time

µs

tREC

VPFD (max) to RST High

200

Figure 6. Power Down/Up Mode AC Waveforms

AI01805

VCC

INPUTS

OUTPUTS

DON’T CARE

HIGH-Z

tFB

tRB

VALID

RECOGNIZED

VPFD (max)

VPFD (min)

VSO

tREC

RST

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