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STW11NK100Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STW11NK100Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() July 2006 Rev 2 1/14 14 STW11NK100Z STW11NK100Z N-channel 1000V - 1.1 Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W TO-247 www.st.com Order codes Part number Marking Package Packaging STW11NK100Z W11NK100Z TO-247 Tube |
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