Reverse Voltage: 100V

Forward Current: 10A

RoHS Device

Comchip Technology CO., LTD.

SMD Schottky Barrier Rectifiers

Halogen Free

Features

- Metal silicon junction, majority carrier conduction.

- High current capability.

TO-277B

Dimension in inches and (millimeter)

0.169(4.30)

0.148(3.75)

0.051(1.30)

0.028(0.70)

0.152(3.85)

0.120(3.05)

0.030(0.75)

0.018(0.45)

0.130(3.30)

0.110(2.80)

0.079(2.00)

0.065(1.65)

0.264(6.70)

0.250(6.35)

0.217(5.50)

0.207(5.25)

0.077(1.95)

0.065(1.65)

0.041(1.05)

0.030(0.75)

0.047(1.20)

0.038(0.96)

0.018(0.45)

0.006(0.15)

0.018(0.45)

0.006(0.15)

REV:A

Page 1

QW-JB134

1

2

3

CDBHA10100L-HF

- Low forward voltage drop.

- High surge capability.

Maximum Ratings (at TA=25°C, unless otherwise noted)

Parameter

Unit

Peak repetitive reverse voltage

DC blocking voltage

Maximum average forward output current

Symbol

VRRM

VDC

IFSM

V

V

A

A

Value

RMS reverse voltage

VRMS

V

IO

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load

Operating junction temperature range

TJ

°C

Storage temperature range

TSTG

°C

100

70

100

10

130

-55 to +150

-55 to +150

Unit

Parameter

Max.

Symbol

Min.

Typ.

RθJL

Typical thermal resistance from junction to lead

°C/W

19

Circuit Diagram

Cathode

3

1

Anode

2

Anode

Heat sink

Mechanical data

- Terminals: Solderable per MIL-STD-202,

method 208.

- Case: TO-277B, molded plastic.

Electrical Characteristics (at TA=25°C, unless otherwise noted)

Unit

Conditions

Parameter

Max.

Min.

Typ.

V

0.67

0.52

0.47

Maximum DC reverse current at rated

DC blocking voltage

0.5

5

mA

Symbol

VF

IR

VF

VF

IR

0.64

TJ = 25°C

TJ = 125°C

IF =10A

IF = 5A

IF = 3A

Notes: 1. Mounted on 30mm x 30mm aluminum PCB.

Maximum instantaneous forward voltage

(Note 1)

Thermal Characteristics