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STFW3N170 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STFW3N170 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc N-Channel MOSFET Transistor STFW3N170 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA 1700 -- V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 0.25mA 3.0 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.3A -- 13 Ω IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V -- ±100 nA IDSS Drain-Source Leakage Current VDS= 1700V; VGS= 0V -- 10 uA VFSD Forward on voltage VGS= 0V,ID= 2.6A -- 1.5 V Outview: TO-3PF Package |
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