UGE10BCT, UGE10CCT, UGE10DCT

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Vishay General Semiconductor

Revision: 23-Feb-16

2

Document Number: 87917

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Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage

per diode

IF = 10 A

TJ = 25 °C

VF (1)

1.25

V

IF = 5 A

1.10

TJ = 150 °C

0.895

Maximum reverse current per diode at

working peak reverse voltage

TJ = 25 °C

IR

10

μA

TJ = 100 °C

200

Maximum reverse recovery time per diode

IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM

trr

25

ns

Maximum reverse recovery time per diode

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

trr

20

ns

Maximum stored charge per diode

IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM

Qrr

9nC

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UGE10BCT

UGE10CCT

UGE10DCT

UNIT

Typical thermal resistance per diode, junction to ambient

RJA

50

°C/W

Typical thermal resistance per diode, junction to case

RJC

4.5

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

UGE10DCT-E3/45

1.80

45

50/tube

Tube