NP50P04SLG

R07DS0241EJ0101 Rev.1.01

Page 2 of 7

May.20.2022

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-c) Notes3

1.78

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-a) Notes3

125

°C/W

Electrical Characteristics

(Ta=25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

—

—

-1

A

VDS = -40 V, VGS = 0 V

Gate Leakage Current

IGSS

—

—



10

A

VGS =  20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

-1.0

-1.4

-2.5

V

VDS = VGS, ID = -250μA

Forward Transfer Admittance

| yfs | Notes4

12

44

—

S

VDS = -10 V, ID = -25 A

Drain to Source On-state Resistance

RDS(on)1 Notes4

—

8.2

9.6

m



VGS = -10 V, ID = -25 A

RDS(on)2 Notes4

—

9.8

15

m



VGS = -4.5 V, ID = -25 A

Input Capacitance

Ciss Notes3

—

3800

5700

pF

VDS = -10 V

VGS = 0 V

f = 1 MHz

Output Capacitance

Coss Notes3

—

740

1120

pF

Reverse Transfer Capacitance

Crss Notes3

—

500

905

pF

Turn-on Delay Time

td(on) Notes3

—

11

24

ns

VDD = -20 V

ID = -25 A

VGS = -10 V

RG = 0



Rise Time

tr Notes3

—

15

39

ns

Turn-off Delay Time

td(off) Notes3

—

250

505

ns

Fall Time

tf Notes3

—

150

380

ns

Total Gate Charge

Qg Notes3

—

100

150

nC

VDD = -32 V

VGS = -10 V

ID = -50 A

Gate to Source Charge

Qgs

—

13

—

nC

Gate to Drain Charge

Qgd

—

30

—

nC

Body Diode Forward Voltage

VF(S-D) Notes4

—

0.96

1.5

V

IF = -50 A, VGS = 0 V

Reverse Recovery Time

trr

—

50

—

ns

IF = -50 A, VGS = 0 V

di/dt = -100 A/

s

Reverse Recovery Charge

Qrr

—

63

—

nC

Notes 3. Designed target value on Renesas measurement condition. Not subject to production test.

4. Pulse test.