SMC4735PA

SMC4735PA Rev.A2.1

Copyright © Semtron Microtech Corp.

www.semtron-micro.com

2

■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted )

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=-

250μA

-30

V

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-

250μA

-1

-1.6

-2.5

V

IGSS

Gate Leakage Current

VDS=0V, VGS=±25V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V, TJ=25°C

1

μA

VDS=-24V, VGS=0V, TJ=75°C

10

RDS(ON)

Drain-source On-Resistance D

VGS=-10V, ID=-14.2A

VGS=-4.5V, ID=-10A

10

14

13

18

mΩ

Gfs

Forward Transconductance

VDS=-10V, ID=-10A

12.5

S

Diode Characteristics

VSD

Diode Forward Voltage D

IS=-1A,VGS=0V

-1

V

IS

Diode Continuous Forward Current

-45

A

trr

Reverse Recovery Time

IS=-10A, dl/dt=100A/

μs

13.8

ns

Qrr

Reverse Recovery Charge

12.3

nC

Dynamic and Switching Parameters E

Qg

Total Gate Charge

VDS=-15V, VGS=-10V

ID=-10A

36

48.6

nC

Qg

Total Gate Charge (4.5V)

18

24.3

Qgs

Gate-Source Charge

8.1

10.9

Qgd

Gate-Drain Charge

6.8

9.2

Ciss

Input Capacitance

VDS=-15V,VGS=0V, f=1MHz

2150

pF

Coss

Output Capacitance

298

Crss

Reverse Transfer Capacitance

135

Rg

Gate Resistance

VGS=0V, VDS=0V, F=1MHZ

8.8

Ω

td(on)

Turn-On Time

VDD=-15V, VGEN=-10V

RG=3.3

Ω, ID=-1A

7.7

15

nS

tr

57.8

129

td(off)

Turn-Off Time

57.5

109

tf

21.3

40

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

A.

Surface mounted on FR4 board using 1 in2 pad size.

B.

Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C).

C.

Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C.

D.

Pulse test width ≤300μs and duty cycle ≤ 2%.

E.

Guaranteed by design, not subject to production testing.

The products and product specifications contained herein are subject to change without notice to improve performance

characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date

We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any

information and circuitry in this datasheet.