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ISCF80136 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF80136 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCF80136 eq MSC040SMA120B4 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Low Capacitances And Low Gate Charge · Fast And Reliable Body Diode · Superior Avalanche Ruggedness · Easy to Parallel APPLICATIONS · Solar Inverters · Motor Drives · DC-DC Converters · Induction Heating And Welding Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+23 V ID Drain Current-Continuous 71 A Drain Current-Continuous@Tc=100℃ 50 A IDM Drain Current-Single Pluse 215 A PD Total Dissipation @TC=25℃ 372 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.4 ℃ /W |
Similar Part No. - ISCF80136 |
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Similar Description - ISCF80136 |
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