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ISCF80133 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF80133 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF80133 eq SCT30N120 SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 0.1mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA 1.8 3.5 -- V RDS(on) Drain-Source On-stage Resistance VGS= 20V, ID= 20A -- -- 100 mΩ IGSS Gate Source Leakage Current VGS= -10/+20V, VDS= 0V -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- -- 25 uA VSD Diode Forward Voltage ISD= 10A, VGS= -5V -- 3.5 -- V PACKAGE OUTLINE (UNIT: mm) |
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