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SII150N06 Datasheet(PDF) 2 Page - Sirectifier Semiconductors

Part # SII150N06
Description  NPT IGBT Modules
PDF  4 Pages
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Manufacturer  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

SII150N06 Datasheet(HTML) 2 Page - Sirectifier Semiconductors

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NPT IGBT Modules
SirectifierR
SII150N06
Characteristics
Symbol
Conditions
min.
typ.
max.
Units
IGBT Wechselrichter/ IGBT Inverter
VGEth
VGE = VCE, IC = 3.0mA
4.5
5.5
6.5
V
ICES
VGE = 0; VCE = 600V, Tj = 25(125)
oC
500
uA
IGES
400
nA
VCE(sat)
IC =150A; VGE = 15V; Tj = 25(125)
oC
1.95(2.2)
2.45(-)
V
Cies
under following conditions
6.5
VGE = 0, VCE = 25V, f = 1MHz
tP
under following conditions:
td(on)
VCC = 300V, IC = 150A
115(125)
ns
tr
RGon = RGoff =1.5 , , Tj = 25(125)
oC
28(30)
ns
td(off)
VGE = ± 15V
200(225)
ns
tf
25(35)
ns
Eon(Eoff)
2.3(4.6)
mJ
Diode Wechselrichter/ Diode Inverter
VF
IF = 150A; VGE = 0V; Tj = 25(125)
oC
1.25(1.2)
1.6(-)
V
IRM
IF = 150A; Tj = 25(125)
oC
180(215)
A
Qr
-di/dt = 5600A/us
uC
Erec
VGE = -10V, VR=300V
mJ
RthJC
Mechanical Data
Ms
to heatsink M6
Nm
Mt
to terminals M5
Nm
w
g
TC = 25
oC, unless otherwise specified
nF
11(19)
VCE = 0; VGE=20V
Tj = 25(125)
oC, LS = 15nH
under following condition
-(4.7)
Cres
0.6
1.0
Isc
nH
10uS, VGE
15V, Tvj = 125
oC , Vcc = 360V
675
A
RthJC
RthCK
0.4
0.02
K/W
TVJ
TVJM
Tstg
-40...+125
150
-40...+125
oC
3
5
2.5
5
325
1(1000)
LCE
40
RCC'+EE'
m
0.21
K/W



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