DIO1266B

Version 1.2, Aug 2024

www.dioo.com

© 2024 DIOO MICROCIRCUITS CO., LTD.

9

9. Application Information

Important notice: Validation and testing are the most reliable ways to confirm system functionality. The

application information is not part of the specification and is for reference purposes only.

9.1. Overvoltage lockout (OVLO) calculation

OVLO can be set externally and override default OVP. By connecting an external resistor-driver to the

OVLO pin. Equation (1) can produce the desired trip voltage and resistor values.

)

/R

R

+

(1

×

V

=

V

2

1

OVLO_TH

IN_OVLO

(1)

Recommended minimum R1 = 820 kΩ.

9.2. On-The-Go (OTG) functionality

During OTG operation, the DIO1266B is initially disabled and the power FET’s bulk diode is forward biased.

The bulk diode represents ~0.7 V drop across the device, which remains until the VIN voltage increases past

2.5 V, when the device is fully enabled. While the device is disabled and the body diode is forward biased,

the max DC current through the diode is 1.8 A. This current is limited by the thermal performance of the

device (0.7 V x 1.8 A = 1.36 W). The #EN pin must be pulled LOW to ensure the device fully enables and

the transient should not exceed the RC time constant of the CIN and COUT capacitors. At the system level,

overvoltage and current protection should be provided outside the DIO1266B.