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DIO1280B Datasheet(PDF) 8 Page - DIOO MICROCIRCUITS CO., LTD |
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DIO1280B Datasheet(HTML) 8 Page - DIOO MICROCIRCUITS CO., LTD |
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8 / 10 page ![]() DIO1280B www.dioo.com © 2019 DIOO MICROCIRCUITS CO., LTD DIO1280B• 2.4 Over-Voltage Lockout (OVLO) Calculation: OVLO can be set externally and override default OVP. By connecting an external resistor-driver to the OVLO pin. Equation (1) can produce the desired trip voltage and resistor values. [ ]2 / 1 1 _ _ R R V V TH OVLO OVLO IN + × = (1) Recommended minimum R1=820kΩ. On-The-Go (OTG) Functionality: During OTG operation, the DIO1280B is initially disabled and the power FET’s bulk diode is forward biased. The bulk diode represents ~0.7V drop across the device, which remains until the V_IN voltage increases past 2.5V, when the device is fully enabled. While the device is disabled and the body diode is forward biased, the max DC current through the diode is 1.8A. This current is limited by the thermal performance of the device (0.7V x 1.8A=1.36W). The #EN pin must be pulled LOW to ensure the device fully enables and the transient should not exceed the RC time constant of the C_IN and C_OUT capacitors. At the system level, over-voltage and current protection should be provided outside the DIO1280B. |
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