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AS89000 Datasheet(PDF) 6 Page - ams-OSRAM AG |
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AS89000 Datasheet(HTML) 6 Page - ams-OSRAM AG |
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6 / 16 page ![]() ams.com db05175e_V3.01_preliminary_2017-07-06 Page 4 of 14 AS89000 V3.01 3 DESCRIPTION OF FUNCTION The AS89000-devices are programmable gain transimpedance amplifiers1 with different numbers of channels (AS89000 – 4 channels). There is one transimpedance amplifier per channel between a current input IIN<X> and a voltage output2 VOUT<X>. Its transimpedance is selectable in 8 stages. This adjustment can be effected by setting of digital inputs SW1, SW3 and SW4 and is valid for all channels simultaneously (chapter 2.2). Also simultaneously valid for all channels is a compensation of the input capacitance of photo- sensors for two possible frequency ranges (switchable by SW4, chapter 2.3). The pins SW1, SW2, SW3 and SW4 are pull down inputs. The second input of all transimpedance amplifiers is used for a common supply by a reference voltage necessarily fed in through the pin VREF. All channels are compensated for an external input capacitance of the photo-sensor of smaller than 80 pF (SW4 = GND). The power supply for the AS89000-devices is typical 3 V to 5 V between VDD and GND. The power down mode is adjusted by PD = VDD and switches off the functionality. In that case it must be pointed out that the transimpedance resistor of stage 8 is between the particular inputs and outputs. The amplifiers are switched off (tri-state). 4 ELECTRICAL CHARACTERISTICS 4.1 Maximum Conditions Violations of absolute maximum conditions are not allowed under any circumstances, otherwise the IC can be destroyed. All voltages are referenced to GND = 0 V. PARAMETER NAME MIN MAX UNIT power supply VDD 0.3 7.0 V input and output voltages IC-pinning 0.3 VDD+0.3 V power dissipation POP 0.025 W operating temperature TOP 40 125 °C storage temperature TSTG 55 155 °C weight m 0,08 g 4.2 Operating Conditions All voltages are referenced to GND = 0 V. Table 5: Operating Conditions PARAMETER NAME MIN TYP MAX UNIT CONDITIO N supply voltage VDD 2.7 3 to 5 5.5 V bias current AS89000 I(VDD) 2.5 4.0 mA 27°C, VDD=5.5 V 1 work as inverted amplifiers 2 VOUT = VREF – IIn * R |
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