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IXFK520N075T2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFK520N075T2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IXFK520N075T2 www.iscsemi.com 1 FEATURES · Drain Current -ID= 520A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V APPILICATIONS · DC-DC Converters and Off-Line UPS · Primary-Side Switch · High Speed Power Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBO L PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous Chip Capability 520 A IDM Drain Current-Pulse Pulse Width Limited by TJM 1350 A PD Total Dissipation 1250 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.12 ℃ /W |
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