isc N-Channel MOSFET Transistor

STH3N150-2

www.iscsemi.com

2023-9-7

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBO

L

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID= 1mA

1500

--

--

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 250uA

3.0

--

5.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 1.3A

--

--

9.0

Ω

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0V

--

--

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 1500V; VGS= 0V

--

--

10

uA

VSD

Forward On-Voltage

IS= 2.5A; VGS= 0V

--

--

1.6

V

Qg

Total Gate Charge

ID=3A

VDD=750V

VGS=10V

--

42

--

nC

Qgs

Gate to Source Charge

--

9

--

Qgd

Gate to Drain (“Miller”)Charge

--

7

--

Ciss

Input Capacitance

VGS=0V,

VDS=25V,

f=1.0MHz

--

1670

--

pF

Coss

Output Capacitance

--

100

--

Crss

Reverse Transfer Capacitance

--

10

--

EAS

Single pulse avalanche energy

ID=3A,Vg=10V,Rg=25Ω,

--

--

460

mJ

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notification. The information contained herein is presented only as a guide for the applications of our

products.