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MIL-PRF-19500 Datasheet(PDF) 9 Page - STMicroelectronics |
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MIL-PRF-19500 Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 19 page ![]() MIL-PRF-19500/376E 9 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF- 19500) JANS level JANTX and JANTXV levels 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICBO2, hFE4 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE4; ∆ICBO2 = 100% of initial value or 2 nA dc, whichever is greater. ∆hFE4 = ±15% ICBO2 ,hFE4 12 See 4.3.1 240 hours minimum See 4.3.1 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100% of initial value or 2 nA dc, whichever is greater; ∆hFE4 = ±15% Subgroup 2 of table I herein; ∆ICBO2 = 100% of initial value or 2 nA dc, whichever is greater; ∆hFE4 = ±25% 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 to 30 V dc: Power shall be applied to achieve TJ = 135 °C minimum and a minimum power dissipation = 75 percent of maximum rated PT (see 1.3). TA = room ambient as defined in 4.5 of MIL-STD-750. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IM measurement current -------------5 mA. b. IH forward heating current -----------50 mA (min). c. tH heating time -------------------------25 - 30 ms. d. tmd measurement delay time ------60 µs max. e. VCE collector-emitter voltage ------10 V dc minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 150°C/W for 2N2484, ZθJX (max) = 67°C/W for 2N2484UA and 2N2484UB. |
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